SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 4
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SI7407DN-T1
Manufacturer Part Number
SI7407DN-T1
Description
MOSFET 12V 15.6A 1.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI7407DN-T1.pdf
(12 pages)
Specifications of SI7407DN-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
9.9 A
Resistance Drain-source Rds (on)
12 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
50 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
200 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7407DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7407DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.01
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
2
1
- 50
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
T
10
J
2 5
-3
- Temperature (°C)
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
= 250 µA
7 5
0.01
10
A
100
0.1
10
-2
100
1
= 25 °C, unless otherwise noted
0.1
Limited by R
Safe Operating Area, Junction-to-Ambient
Limited
* V
I
D(on)
125
GS
Single Pulse
T
C
= 25 °C
Square Wave Pulse Duration (s)
minimum V
150
V
DS
DS(on)*
10
- Drain-to-Source Voltage (V)
BV
-1
1
DS S
GS
Limited
at which r
I
DM
DS(on)
Limited
1 0
1
50
40
30
20
10
0
0.01
1 ms
10 ms
100 ms
1 s
10 s
DC
is specified
Single Pulse Power, Junction-to-Ambient
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
A
t
1
= P
Time (s)
t
2
DM
S-80581-Rev. D, 17-Mar-08
Z
Document Number: 71912
thJA
th J A
100
t
t
10
1
2
(t)
= 65 °C/W
100
600
600