SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7407DN-T1
• Description: MOSFET 12V 15.6A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7407DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.9 A
• Resistance Drain-source Rds (on): 12 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 50 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 200 ns

Si7407DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.01
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
2
1
- 50
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
T
10
J
2 5
-3
- Temperature (°C)
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
= 250 µA
7 5
0.01
10
A
100
0.1
10
-2
100
1
= 25 °C, unless otherwise noted
0.1
Limited by R
Safe Operating Area, Junction-to-Ambient
Limited
* V
I
D(on)
125
GS
Single Pulse
T
C
= 25 °C
Square Wave Pulse Duration (s)
minimum V
150
V
DS
DS(on)*
10
- Drain-to-Source Voltage (V)
BV
-1
1
DS S
GS
Limited
at which r
I
DM
DS(on)
Limited
1 0
1
50
40
30
20
10
0
0.01
1 ms
10 ms
100 ms
1 s
10 s
DC
is specified
Single Pulse Power, Junction-to-Ambient
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
A
t
1
= P
Time (s)
t
2
DM
S-80581-Rev. D, 17-Mar-08
Z
Document Number: 71912
thJA
th J A
100
t
t
10
1
2
(t)
= 65 °C/W
100
600
600