SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7407DN-T1
• Description: MOSFET 12V 15.6A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7407DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.9 A
• Resistance Drain-source Rds (on): 12 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 50 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 200 ns

TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 71912
S-80581-Rev. D, 17-Mar-08
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http://www.vishay.com/ppg?71912.
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
A
= 25 °C, unless otherwise noted
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7407DN
www.vishay.com
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