MT48LC2M32B2P-55:G Micron Technology Inc, MT48LC2M32B2P-55:G Datasheet - Page 38

• Manufacturer Part Number: MT48LC2M32B2P-55:G
• Description: IC SDRAM 64MBIT 5.5NS 86TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT48LC2M32B2P-55:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 5.5ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 30:
Table 8:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
CKE
H
H
L
L
n - 1
Internal
States
Truth Table 2 – CKE
Notes: 1–4 apply to entire table
WRITE with Auto Precharge Interrupted by a WRITE
CKE
H
H
L
L
Notes:
n
COMMAND
ADDRESS
Note:
BANK m
BANK n
CLK
DQ
1. CKE
2. Current state is the state of the SDRAM immediately prior to clock edge n.
3. COMMAND
4. All states and sequences not shown are illegal or reserved.
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for
6. Exiting self refresh at clock edge n will put the device in the all banks idle state after
7. After exiting clock suspend at clock edge n, the device will resume operation and recognize
Reading or writing
Current State
Clock suspend
Clock suspend
clock edge.
COMMAND
clock edge n + 1 (provided that
met. COMMAND INHIBIT or NOP commands should be issued on any clock edges occurring
during the
period.
the next command at clock edge n + 1.
All banks idle
All banks idle
Power-down
Power-down
DQM is LOW.
Self refresh
Self refresh
Page Active
T0
n
NOP
is the logic state of CKE at clock edge n; CKE
t
WRITE - AP
n
n
XSR period. A minimum of two NOP commands must be provided during
BANK n,
Page Active
BANK n
.
COL a
T1
D
is the command registered at clock edge n, and ACTION
a
IN
WRITE with Burst of 4
a + 1
T2
D
NOP
COMMAND INHIBIT or NOP
COMMAND INHIBIT or NOP
COMMAND INHIBIT or NOP
IN
See Table 9 on page 39
38
AUTO REFRESH
WRITE or NOP
COMMAND
a + 2
T3
D
t
NOP
CKS is met).
IN
X
X
X
X
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
COL d
BANK m
T4
D
d
t
n
IN
WR - BANK n
Interrupt Burst, Write-Back
WRITE with Burst of 4
T5
n - 1
d + 1
NOP
D
IN
was the state of CKE at the previous
Maintain clock suspend
Maintain power-down
Maintain self refresh
Clock suspend entry
Power-down entry
Exit clock suspend
Exit power-down
Self refresh entry
T6
Exit self refresh
d + 2
NOP
D
t RP - BANK n
IN
Precharge
ACTION
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
DON’T CARE
n
T7
d + 3
NOP
D
t WR - BANK m
n
is a result of
IN
Write-Back
Commands
Notes
t
7
XSR is
5
6
t
XSR