MT48LC2M32B2P-5:G Micron Technology Inc, MT48LC2M32B2P-5:G Datasheet - Page 46

• Manufacturer Part Number: MT48LC2M32B2P-5:G
• Description: IC SDRAM 64MBIT 200MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC2M32B2P-5:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOP
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 4.5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 280mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Package: 86TSOP-II
• Address Bus Width: 13 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 4.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14:
Table 15:
Table 16:
Table 17:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
Parameter/Condition
Parameter/Condition
Parameter
Parameter
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQs are disabled; 0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Operating current: Active mode; Burst = 2; READ or WRITE;
≥
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
banks active after
Operating current: Burst mode; Continuous burst; READ or
WRITE; All banks active; CL = 3
Auto refresh current:
CL = 3; CKE, CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQs
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQs
t
RC (MIN); CL = 3
DC Electrical Characteristics and Operating Conditions
Notes 1, 6, 27 apply to entire table; notes appear on pages 49 and 50; V
I
Notes 1, 6, 11, 13, 27 apply to entire table; notes appear on pages 49 and 50; V
TSOP Capacitance
Note 2 applies to entire table; notes appear on pages 49 and 50
VFBGA Capacitance
Note 2 applies to entire table; notes appear on pages 49 and 50
DD
IN
Specifications and Conditions
t
RCD met; No accesses in progress
≤ V
OUT
DD
OUT
(All other pins not under test = 0V)
= 4mA)
= –4mA)
t
RFC =
OUT
t
RFC (MIN)
≤ V
DD
Q
t
46
RC
V
Symbol
Symbol
DD
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
V
V
V
, V
I
V
OZ
OH
I
OL
IH
IL
I
1
2
3
4
5
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
Q
200
280
225
80
-5
2
2
Symbol
Symbol
Min
–0.3
C
C
2.4
C
C
C
C
–5
–5
3
2
–
I
I
IO
I
I
IO
1
2
1
2
190
260
225
-55
70
2
2
DD
Max
, V
Electrical Specifications
V
DD
DD
Max
150
180
225
Min
Min
DD
60
3.6
0.8
0.4
-6
2.5
2.5
4.0
2.5
2.5
4.0
Q = +3.3V ±0.3V
2
2
5
5
–
+ 0.3
©2001 Micron Technology, Inc. All rights reserved.
, V
64Mb: x32 SDRAM
DD
130
160
225
Q = +3.3V ±0.3V
50
-7
2
2
Units
Max
Max
4.0
4.0
6.5
4.0
4.0
6.5
µA
µA
V
V
V
V
V
Units
mA
mA
mA
mA
mA
mA
Notes
Units
Units
Notes
18, 19,
19, 26
19, 26
19, 26
22
22
3, 18,
3, 12,
3, 18,
3, 12,
pF
pF
pF
pF
pF
pF
26
4