MT48LC2M32B2P-5:G Micron Technology Inc, MT48LC2M32B2P-5:G Datasheet - Page 47

• Manufacturer Part Number: MT48LC2M32B2P-5:G
• Description: IC SDRAM 64MBIT 200MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC2M32B2P-5:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOP
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 4.5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 280mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Package: 86TSOP-II
• Address Bus Width: 13 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 4.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM
hold time
CS#, RAS#, CAS#, WE#, DQM
setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time
ACTIVE-to-PRECHARGE
command
ACTIVE-to-ACTIVE command
period
AUTO REFRESH period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
Refresh period–Automotive
(4,096 rows)
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
Write recovery time
Exit self refresh to ACTIVE
command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11 apply to entire table; notes appear on pages 49 and 50; V
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
Symbol
t
t
t
t
t
t
t
t
t
t
AC (3)
AC (2)
AC (1)
t
CK (3)
CK (2)
CK (1)
HZ (3)
HZ (2)
HZ (1)
t
t
t
REF
t
t
t
t
t
CMH
t
t
t
CMS
t
t
t
CKH
RCD
RRD
t
CKS
t
RAS
t
t
XSR
t
t
RFC
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
AT
Min
38.7
1.5
1.5
1.5
1.5
4.5
1.5
0.3
55
60
15
15
10
55
1
2
2
5
1
1
1
1
2
–
–
–
–
–
–
–
–
–
-5
Max
120k
4.5
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
47
Min
38.7
16.5
16.5
1.5
5.5
1.5
1.5
1.5
0.3
55
60
11
55
1
2
2
1
1
1
5
1
2
2
–
–
–
–
–
–
–
–
–
-55
Max
120k
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.2
64
16
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
+ 6ns
1CLK
12ns
Min
1.5
2.5
2.5
1.5
1.5
1.5
0.3
10
20
42
60
60
18
18
12
70
1
6
1
1
1
1
2
–
–
-6
Max
120k
5.5
7.5
5.5
7.5
1.2
17
17
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
DD
+ 7ns
, V
1CLK
14ns
Min
2.75
2.75
2.5
0.3
10
20
70
20
14
70
42
70
20
–
–
–
1
2
7
1
2
1
2
1
2
–
1
–
–
–
–
©2001 Micron Technology, Inc. All rights reserved.
DD
64Mb: x32 SDRAM
Q = +3.3V ±0.3V
-7
Max
120k
5.5
5.5
1.2
17
17
64
16
8
–
–
–
–
–
–
–
–
–
–
–
–
–
8
–
–
–
–
–
–
–
–
–
–
Units Notes
t
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
23
23
23
10
10
10
25
24
28
20
7