BCX41E6327XT Infineon Technologies, BCX41E6327XT Datasheet
BCX41E6327XT
Specifications of BCX41E6327XT
Related parts for BCX41E6327XT
BCX41E6327XT Summary of contents
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NPN Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BCX42 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type BCX41 Maximum Ratings Parameter ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
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DC current gain BCX 41/BSS 150 25 - Base-emitter saturation voltage ...
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Collector cutoff current I CBO CBO BCX 41/BSS Ι max CB0 Collector-base capacitance C Emitter-base capacitance ...
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Permissible Pulse Load = ƒ totmax totDC p BCX 41/BSS tot max tot ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...