MT48LC16M8A2P-75:G Micron Technology Inc, MT48LC16M8A2P-75:G Datasheet - Page 21

• Manufacturer Part Number: MT48LC16M8A2P-75:G
• Description: IC SDRAM 128MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M8A2P-75:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Commands
Table 7:
COMMAND INHIBIT
NO OPERATION (NOP)
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
Name (Function)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ
burst)
WRITE (Select bank and column, and start WRITE
burst)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks)
AUTO refresh or self refresh
(Enter self refresh mode)
LMR
Write enable/output enable
Write inhibit/output High-Z
Truth Table 1 – Commands and DQM Operation
CKE is HIGH for all commands shown except SELF REFRESH
Notes:
Table 7 provides a quick reference of available commands. This is followed by a written
description of each command. Three additional truth tables appear following “Opera-
tions” on page 24; these tables provide current state/next state information.
1. A0–A11 provide row address, and BA0, BA1 determine which bank is made active.
2. A0–A9; A11 (x4); A0–A9 (x8); or A0–A8 (x16) provide column address; A10 HIGH enables the
3. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged
4. This command is AUTO REFRESH if CKE is HIGH and SELF REFRESH if CKE is LOW.
5. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except
6. A0–A11 define the op-code written to the mode register.
7. Activates or deactivates the DQ during WRITEs (0-clock delay) and READs (2-clock delay).
The COMMAND INHIBIT function prevents new commands from being executed by the
SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively dese-
lected. Operations already in progress are not affected.
The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM, which is
selected (CS# is LOW). This prevents unwanted commands from being registered during
idle or wait states. Operations already in progress are not affected.
auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge fea-
ture; BA0, BA1 determine which bank is being read from or written to.
and BA0, BA1 are “Don’t Care.”
for CKE.
CS#
H
L
L
L
L
L
L
L
–
–
L
21
RAS#
H
H
H
H
X
L
L
L
L
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CAS#
H
H
H
H
X
L
L
L
L
–
–
WE#
H
H
H
H
X
L
L
L
L
–
–
128Mb: x4, x8, x16 SDRAM
DQM
L/H8
L/H8
H
X
X
X
X
X
X
X
L
©1999 Micron Technology, Inc. All rights reserved.
ADDR
Bank/
Bank/
Bank/
Code
code
row
Op-
col
col
X
X
X
X
–
–
High-Z
Active
Active
Commands
Valid
DQ
X
X
X
X
X
X
X
Notes
4, 5
1
2
2
3
6
7
7