MT48LC16M8A2P-75:G Micron Technology Inc, MT48LC16M8A2P-75:G Datasheet - Page 50

• Manufacturer Part Number: MT48LC16M8A2P-75:G
• Description: IC SDRAM 128MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M8A2P-75:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 17:
Table 18:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
AC
Parameter
Parameter
Access time from CLK (positive
edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
Refresh period - Automotive
(4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
Characteristics
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on page 51
AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 51
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
t
t
REF
t
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
CMH
OHN
t
t
CMS
t
t
t
CKH
RCD
RRD
t
CKS
t
RAS
t
t
XSR
t
t
REF
RFC
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
AT
1 CLK
+ 7ns
Min
0.8
1.5
2.5
2.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
60
18
60
18
12
12
67
42
–
–
6
–
–
–
1
3
–
–
-6A
50
120,000
Max
Symbol
5.4
5.4
1.2
t
64
16
t
t
CKED
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
t
DQD
CCD
PED
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 CLK
+ 7ns
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
7
1
3
–
–
-6A
-7E
1
1
1
0
120,000
Max
5.4
5.4
5.4
5.4
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
128Mb: x4, x8, x16 SDRAM
-7E
1
1
1
0
+ 7.5ns
1 CLK
Electrical Specifications
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
44
66
20
66
20
15
15
75
1
3
–
–
–
–
–
–
-75
©1999 Micron Technology, Inc. All rights reserved.
-75
120,000
1
1
1
0
Max
5.4
5.4
1.2
64
16
6
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Units
t
t
t
t
CK
CK
CK
CK
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
–
Notes
Notes
17
14
14
17
27
23
23
10
10
28
24
25
20
7