TIP31D-S Bourns, TIP31D-S Datasheet - Page 3

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TIP31D-S

Manufacturer Part Number
TIP31D-S
Description
Transistors Bipolar - BJT 120V 3A NPN
Manufacturer
Bourns
Datasheet

Specifications of TIP31D-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
1000
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
R O D U C T
1000
100
10
0·001
V
T
t
C
p
CE
= 300 µs, duty cycle < 2%
= 25°C
= 4 V
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
0·01
I
C
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
0·1
1·0
0·9
0·8
0·7
0·6
0·5
0·01
V
T
TYPICAL CHARACTERISTICS
1·0
C
CE
= 25°C
= 4 V
BASE-EMITTER VOLTAGE
TCS631AA
COLLECTOR CURRENT
I
C
0·1
- Collector Current - A
10
Figure 3.
vs
0·01
COLLECTOR-EMITTER SATURATION VOLTAGE
1·0
0·1
10
0·1
1·0
I
I
I
I
NPN SILICON POWER TRANSISTORS
C
C
C
C
= 100 mA
= 300 mA
= 1 A
= 3 A
TCS631AC
1·0
TIP31, TIP31A, TIP31B, TIP31C
I
BASE CURRENT
B
- Base Current - mA
10
Figure 2.
vs
10
100
TCS631AB
1000
3

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