BF840 T/R NXP Semiconductors, BF840 T/R Datasheet - Page 2

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BF840 T/R

Manufacturer Part Number
BF840 T/R
Description
Transistors Bipolar - BJT TRANS MED TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF840 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Collector-emitter Saturation Voltage
4 V
Gain Bandwidth Product Ft
380 MHz
Dc Collector/base Gain Hfe Min
67 at 1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.025 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BF840,215
NXP Semiconductors
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• AM mixers
• IF amplifiers in AM/FM receivers.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
BF840
BF840
V
V
V
I
I
P
T
T
T
C
CM
NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN medium frequency transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
plastic surface mounted package; 3 leads
MARKING CODE
NC*
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
DESCRIPTION
2
CONDITIONS
PACKAGE
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT23) and symbol.
base
emitter
collector
1
−65
−65
3
MIN.
DESCRIPTION
2
MAM255
40
40
4
25
25
250
+150
150
+150
MAX.
Product data sheet
1
VERSION
BF840
SOT23
3
2
V
V
V
mA
mA
mW
°C
°C
°C
UNIT

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