MT48LC32M8A2P-7E:D Micron Technology Inc, MT48LC32M8A2P-7E:D Datasheet - Page 24

• Manufacturer Part Number: MT48LC32M8A2P-7E:D
• Description: IC SDRAM 256MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC32M8A2P-7E:D

• Package / Case: 54-TSOP II
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Configuration: 4 BLK (8M X 8)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – I
Table 10: I
Notes 1–5 apply to all parameters and conditions; V
Table 11: I
Notes 1–5 apply to all parameters and conditions; V
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks active af-
ter
Operating current: Burst mode; Continuous burst; READ or WRITE; All banks
active
Auto refresh current: CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; Page burst; READ or WRITE; All banks
active
Auto refresh current: CKE = HIGH; CS# = HIGH
Self refresh current: CKE ≤ 0.2V
t
RCD met; No accesses in progress
t
RCD met; No accesses in progress
DD
DD
Specifications and Conditions (-6A)
Specifications and Conditions (-7E, -75)
Notes:
1. All voltages referenced to V
2. The minimum specifications are used only to indicate cycle time at which proper opera-
3. An initial pause of 100μs is required after power-up, followed by two AUTO REFRESH
4. AC operating and I
tion over the full temperature range is ensured; (0°C ≤ TA ≤ +70°C (commercial), –40°C ≤
TA ≤ +85°C (industrial), and –40°C ≤ TA ≤ +105°C (automotive)).
commands, before proper device operation is ensured. (V
up simultaneously. V
mand wake-ups should be repeated any time the
reference level of 1.5V. If the input transition time is longer than 1ns, then the timing is
DD
t
t
t
Standard
Low power (L)
RFC =
RFC = 7.813μs
RFC = 1.953μs (AT)
Parameters
DD
DD
DD
/V
t
t
t
/V
RFC =
RFC = 7.813μs
RFC = 1.953μs (AT)
SS
DDQ
DDQ
test conditions have V
t
RFC (MIN)
and V
= +3.3V ±0.3V
= +3.3V ±0.3V
t
t
24
t
RC =
RC =
RFC (MIN)
SS
Electrical Specifications – I
SSQ
.
t
t
must be at same potential.) The two AUTO REFRESH com-
RC (MIN)
RC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
DD6
DD7
DD7
IL
= 0V and V
Symbol
I
I
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
DD6
DD7
256Mb: x4, x8, x16 SDRAM
t
REF refresh requirement is exceeded.
135
135
285
-7E
3.5
2.5
1.5
40
2
8
Max
IH
DD
= 3.0V using a measurement
-6A
135
135
285
and V
3.5
2.5
© 1999 Micron Technology, Inc. All rights reserved.
40
2
8
-75
125
135
270
3.5
2.5
1.5
40
2
8
DDQ
DD
must be powered
Unit
mA
mA
mA
mA
mA
mA
mA
μA
Unit
Parameters
mA
mA
mA
mA
mA
mA
mA
mA
mA
10, 11, 12
6, 9, 10,
6, 8, 10,
6, 9, 10,
6, 9, 10,
6, 8, 10,
6, 9, 10,
6, 8, 9,
Notes
6, 8, 9,
10, 13,
Notes
11
12
11
11
13
13
13
13
14
7
7