MT48LC32M8A2P-7E:D Micron Technology Inc, MT48LC32M8A2P-7E:D Datasheet - Page 26

• Manufacturer Part Number: MT48LC32M8A2P-7E:D
• Description: IC SDRAM 256MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC32M8A2P-7E:D

• Package / Case: 54-TSOP II
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Configuration: 4 BLK (8M X 8)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – AC Operating Conditions
Table 12: Electrical Characteristics and Recommended AC Operating Conditions (-6A)
Notes 1, 2, 4, 5, 7, and 20 apply to all parameters and conditions
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Parameter
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (8192 rows)
Refresh period – automotive (8192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
Electrical Specifications – AC Operating Conditions
CL = 3
CL = 3
CL = 3
26
Symbol
t
t
t
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
t
REF
AC(3)
CK(3)
t
t
t
t
t
CMH
t
t
t
OHn
t
t
CKH
CMS
t
t
t
RAS
RCD
RRD
t
CKS
t
t
RFC
t
XSR
t
t
REF
WR
OH
AH
CH
DH
AS
DS
HZ
RC
CL
RP
t
LZ
T
AT
256Mb: x4, x8, x16 SDRAM
1 CLK +
Min
6ns
0.8
1.5
2.5
2.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
42
60
18
60
18
12
12
67
6
1
3
–
–
–
–
-6A
120,000
© 1999 Micron Technology, Inc. All rights reserved.
Max
5.4
1.5
5.4
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
18
14
19
16
12
6
3