MT48LC32M8A2P-7E:D Micron Technology Inc, MT48LC32M8A2P-7E:D Datasheet - Page 78

• Manufacturer Part Number: MT48LC32M8A2P-7E:D
• Description: IC SDRAM 256MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC32M8A2P-7E:D

• Package / Case: 54-TSOP II
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Configuration: 4 BLK (8M X 8)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command
Figure 48: WRITE Without Auto Precharge
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank
ACTIVE
Row
Row
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
Disable auto precharge
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
t CMS
t CL
Column m
t DS
WRITE
Bank
T2
D
IN
t CMH
t DH
t CH
t DS
T3
NOP
D
IN
t DH
t DS
T4
NOP
D
IN
t DH
78
t DS
NOP
T5
D
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR
NOP
T6
256Mb: x4, x8, x16 SDRAM
PRECHARGE
Single bank
All banks
PRECHARGE Operation
Bank
T7
© 1999 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care