IS41LV16105B-60TL ISSI, Integrated Silicon Solution Inc, IS41LV16105B-60TL Datasheet

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IS41LV16105B-60TL

Manufacturer Part Number
IS41LV16105B-60TL
Description
IC DRAM 16MBIT 60NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
FPMr
Datasheet

Specifications of IS41LV16105B-60TL

Format - Memory
RAM
Memory Type
DRAM - FP
Memory Size
16M (1M x 16)
Speed
60ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Organization
1Mx16
Density
16Mb
Address Bus
10b
Access Time (max)
60ns
Maximum Clock Rate
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
80mA
Pin Count
44
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS41LV16105B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
• Refresh Mode:
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range: -30
• Industrial Temperature Range: -40
• Lead-free available
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
VDD
VDD
VDD
RAS
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
WE
NC
NC
NC
NC
NC
A0
A1
A2
A3
— 1,024 cycles/16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
42-Pin SOJ
VDD
VDD
RAS
VDD
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
WE
NC
NC
NC
NC
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
o
o
C to +85
C to +85
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
o
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
o
C
C
DESCRIPTION
The
mance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes the IS41LV16105B
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41LV16105B ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and
400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
PIN DESCRIPTIONS
Parameter
Max. RAS Access Time (t
Max. CAS Access Time (t
Max. Column Address Access Time (t
Min. Fast Page Mode Cycle Time (t
Min. Read/Write Cycle Time (t
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
V
GND
NC
DD
ISSI
IS41LV16105B is 1,048,576 x 16-bit high-perfor-
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Address Inputs
RAC
CAC
)
)
RC
)
PC
ISSI
)
AA
)
-50
50
13
25
20
84
APRIL 2005
104
-60
60
15
30
25
Unit
ns
ns
ns
ns
ns
®
1

Related parts for IS41LV16105B-60TL

IS41LV16105B-60TL Summary of contents

Page 1

... Mode allows 1,024 random accesses within a single row with access cycle time as short per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16105B ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41LV16105B ideally suited for high- bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications ...

Page 2

... IS41LV16105B FUNCTIONAL BLOCK DIAGRAM OE WE CAS LCAS CLOCK UCAS GENERATOR RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0- CONTROL CAS WE LOGICS DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS MEMORY ARRAY 1,048,576 x 16 Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI OE CONTROL LOGIC I/O0-I/O15 Rev ...

Page 3

... IS41LV16105B TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) Read-Write (1,2) Hidden Refresh Read (2) Write (1,3) RAS-Only Refresh (4) CBR Refresh Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active). ...

Page 4

... OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41LV16105B CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41LV16105B both BYTE READ and BYTE WRITE cycle capabilities ...

Page 5

... IS41LV16105B ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage DD I Output Current OUT P Power Dissipation D T Commercial Operation Temperature A Extended Temperature Industrial Temperature T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 6

... IS41LV16105B ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level OL I Standby Current: TTL Standby Current: CMOS Operating Current (2,3,4) Random Read/Write Average Power Supply Current ...

Page 7

... IS41LV16105B (1,2,3,4,5,6) AC CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width ...

Page 8

... IS41LV16105B AC CHARACTERISTICS (Continued) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Write Command Hold Time WCR (referenced to RAS) (17) t Write Command Pulse Width WP WE Pulse Widths to Disable Outputs t WPZ Write Command to RAS Lead Time t RWL Write Command to CAS Lead Time t CWL ...

Page 9

... IS41LV16105B AC TEST CONDITIONS Output load: One TTL Load and Input timing reference levels 2.0V Output timing reference levels Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the t 2 ...

Page 10

... IS41LV16105B FAST-PAGE-MODE READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of RAS or CAS, whichever occurs last OFF RAS t CSH t RSH RCD CAS CLCH RAD RAL t t RAH ASC Column t RCS RAC t CAC t CLC Open Integrated Silicon Solution, Inc. — 1-800-379-4774 ...

Page 11

... IS41LV16105B FAST PAGE MODE READ-MODIFY-WRITE CYCLE RAS t t CRP RCD UCAS/LCAS RAD t RAH t ASR ADDRESS Row t RCS RAC I/O0-I/O15 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/18/05 t RASP t CSH t CAS CPWD t CAH t t ASC ASC t AR Column Column t CWL t RWD t AWD ...

Page 12

... IS41LV16105B FAST-PAGE-MODE EARLY WRITE CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O 12 (OE = DON'T CARE RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH CAH ASC t ACH Column t CWL t RWL t WCR t t WCS WCH DHR Valid Data Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® ...

Page 13

... IS41LV16105B FAST-PAGE-MODE READ WRITE CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/18/05 (LATE WRITE and READ-MODIFY-WRITE Cycles) t RWC t RAS t CSH t RCD RAD RAH CAH ASC Column t RWD t t RCS t AWD RAC t CAC t CLZ ...

Page 14

... IS41LV16105B FAST PAGE MODE EARLY WRITE CYCLE RAS t t CRP RCD UCAS/LCAS RAD t RAH t ASR ADDRESS Row t WCS WE t WCR OE t DHR t DS I/O0-I/O15 14 t RASP t CSH t CAS CAH t ASC t ASC t AR Column Column t t CWL CWL t t WCH WCS Valid D ...

Page 15

... IS41LV16105B AC WAVEFORMS (With WE-Controlled Disable) READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE RAS RAS RAS RAS RAS-ONLY REFRESH CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/18/05 t CSH t t RCD CAS RAD t t RAH ...

Page 16

... IS41LV16105B CBR CBR CBR REFRESH CYCLE CBR CBR (Addresses; WE DON'T CARE) RAS t RPC t CP UCAS/LCAS I/O (1) HIDDEN REFRESH CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. is referenced from rising edge of RAS or CAS, whichever occurs last. ...

Page 17

... Industrial Range: - +85 Speed (ns) Order Part No. 50 IS41LV16105B-50KI IS41LV16105B-50KLI IS41LV16105B-50TI IS41LV16105B-50TLI 60 IS41LV16105B-60KI IS41LV16105B-60KLI IS41LV16105B-60TI IS41LV16105B-60TLI Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/18/ Package 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) ...

Page 18

PACKAGING INFORMATION 400-mil Plastic SOJ Package Code Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 ...

Page 19

PACKAGING INFORMATION Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 ...

Page 20

PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads ( — 1.20 — A1 0.05 0.15 0.002 0.006 b 0.30 0.52 0.012 ...

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