MT46V64M8P-6T:F Micron Technology Inc, MT46V64M8P-6T:F Datasheet - Page 44

• Manufacturer Part Number: MT46V64M8P-6T:F
• Description: IC DDR SDRAM 512MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M8P-6T:F

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 175mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 30:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Current State
Any
Idle
Row active
Read
(auto precharge
disabled)
Write
(auto precharge
disabled)
Truth Table 3 – Current State Bank n – Command to Bank n
Notes: 1–6 apply to the entire table; Notes appear below
Notes:
CS#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKE
2. This table is bank-specific, except where noted (that is, the current state is for a specific
3. Current state definitions:
4. The following states must not be interrupted by a command issued to the same bank. COM-
5. The following states must not be interrupted by any executable command; COMMAND
after
bank and the commands shown are those allowed to be issued to that bank when in that
state). Exceptions are covered in the notes below.
MAND INHIBIT or NOP commands, or allowable commands to the other bank should be
issued on any clock edge occurring during these states. Allowable commands to the other
bank are determined by its current state and Table 30 and according to Table 31 on
page 45.
INHIBIT or NOP commands must be applied on each positive clock edge during these states.
• Idle: The bank has been precharged, and
• Row active: A row in the bank has been activated, and
• Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
• Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
• Precharging: Starts with registration of a PRECHARGE command and ends when
• Row activating: Starts with registration of an ACTIVE command and ends when
• Read with auto precharge enabled: Starts with registration of a READ command with
• Write with auto precharge enabled: Starts with registration of a WRITE command with
RAS# CAS#
bursts/accesses and no register accesses are in progress.
terminated or been terminated.
terminated or been terminated.
met. Once
met. Once
auto precharge enabled and ends when
will be in the idle state.
auto precharge enabled and ends when
will be in the idle state.
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
t
XSNR has been met (if the previous state was self refresh).
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
t
t
RP is met, the bank will be in the idle state.
RCD is met, the bank will be in the “row active” state.
WE#
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
Command/Action
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate WRITE burst, start
PRECHARGE)
n-1
44
was HIGH and CKE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
RP has been met. Once
RP has been met. Once
t
RP has been met.
512Mb: x4, x8, x16 DDR SDRAM
n
is HIGH (see Table 33 on page 47) and
t
RCD has been met. No data
©2000 Micron Technology, Inc. All rights reserved.
t
t
RP is met, the bank
RP is met, the bank
Commands
Notes
10, 12
10, 11
8, 11
t
10
10
10
10
t
RCD is
7
7
8
8
9
RP is