MT46V64M8P-6T:F Micron Technology Inc, MT46V64M8P-6T:F Datasheet - Page 63

IC DDR SDRAM 512MBIT 6NS 66TSOP

MT46V64M8P-6T:F

Manufacturer Part Number
MT46V64M8P-6T:F
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V64M8P-6T:F

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (64M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
MT46V64M8P-6T:F
Manufacturer:
MICRON
Quantity:
6 538
Part Number:
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Manufacturer:
IR
Quantity:
8 000
Part Number:
MT46V64M8P-6T:F
Manufacturer:
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Quantity:
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Figure 28:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
Consecutive READ Bursts
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
READ
Col n
Bank,
READ
Bank,
READ
Col n
Col n
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
Bank,
Bank,
Bank,
READ
Col b
READ
Col b
READ
Col b
T2
T2
T2
t
DQSCK, and
63
DO
n
T2n
T2n
DO
n
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
DO
n
T3n
T3n
T3n
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T4
NOP
T4
T4
NOP
NOP
DO
b
T4n
T4n
T4n
DO
©2000 Micron Technology, Inc. All rights reserved.
b
T5
T5
T5
NOP
NOP
NOP
DO
Don’t Care
b
T5n
T5n
T5n
Operations

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