MT48LC4M32B2P-6:G Micron Technology Inc, MT48LC4M32B2P-6:G Datasheet - Page 46

• Manufacturer Part Number: MT48LC4M32B2P-6:G
• Description: IC SDRAM 128MBIT 167MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2P-6:G

• Package / Case: 86-TSOPII
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 86
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 17/7.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 195mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Configuration: 4 BLK (1M X 32)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
AC Characteristics
Parameter
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
AUTO REFRESH period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
Refresh period - Automotive (4,096 rows)
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
Write recovery time
Exit self refresh to ACTIVE command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 7, 8, 9, 11 apply to the entire table; notes appear on page 48
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
Symbol
t
t
t
t
t
t
t
t
t
t
t
AC (3)
AC (2)
AC (1)
CK (3)
CK (2)
CK (1)
HZ (3)
HZ (2)
HZ (1)
t
t
REF
t
t
t
t
t
t
CMH
t
t
t
t
t
CKH
CMS
t
RCD
RRD
t
t
RAS
t
t
CKS
RFC
t
XSR
t
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
46
T
AT
1 CLK+
12ns
Min
6ns
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.5
2.5
2.5
1.5
1.5
1.5
0.3
10
20
42
60
60
18
18
12
70
1
6
1
1
1
1
2
-6
120K
Max
5.5
7.5
5.5
7.5
1.2
17
17
64
16
1 CLK+
14ns
Min
2.75
2.75
7ns
2.5
0.3
10
20
42
70
70
20
20
14
70
Electrical Specifications
7
1
2
1
2
1
2
1
2
1
-7
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
120K
Max
5.5
5.5
1.2
17
17
64
16
8
8
Units
t
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
Notes
23
23
23
10
10
10
25
24
27
20
7