MT48LC4M32B2P-6:G Micron Technology Inc, MT48LC4M32B2P-6:G Datasheet - Page 48

IC SDRAM 128MBIT 167MHZ 86TSOP

MT48LC4M32B2P-6:G

Manufacturer Part Number
MT48LC4M32B2P-6:G
Description
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2P-6:G

Package / Case
86-TSOPII
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
195mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Configuration
4 BLK (1M X 32)
Interface Type
LVTTL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Notes
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
10. Outputs measured at 1.5V with equivalent load:
11.
12. AC timing and I
13. Other input signals are allowed to transition no more than once in any two-clock
14. I
15. Timing actually specified by
16. Timing actually specified by
17. Timing actually specified by
18. Required clocks are specified by JEDEC functionality and are not dependent on any
19. The I
20. Address transitions average one transition every two clocks.
21. CLK must be toggled a minimum of two times during this period.
22. Based on
23. V
1. All voltages referenced to V
2. This parameter is sampled. V
3. I
4. Enables on-chip refresh and address counters.
5. The minimum specifications are used only to indicate cycle time at which proper
6. The minimum specifications are used only to indicate cycle time at which proper
7. An initial pause of 100µs is required after power-up, followed by two AUTO Refresh
8. AC characteristics assume
9. In addition to meeting the transition rate specification, the clock and CKE must tran-
biased at 1.4V. AC can range from 0pF to 6pF.
with minimum cycle time and the outputs open.
operation over the full temperature range (0°C ≤ T
+85°C (industrial), and –40°C ≤ T
operation over the full temperature range (0°C ≤ T
IT parts) is ensured.
commands, before proper device operation is ensured. (V
ered up simultaneously. V
Refresh command wake-ups should be repeated any time the
ment is exceeded.
sit between V
Q
t
a reference to V
High-Z.
crossover point.
period and are otherwise at valid V
cycle rate.
minimum cycle rate.
timing parameter.
mum cycle rate is slower as CL is reduced.
cannot be greater than one third of the cycle rate. V
for a pulse width ≤ 3ns, and the pulse width cannot be greater than one third of the
cycle rate.
DD
HZ defines the time at which the output achieves the open circuit condition; it is not
DD
IH
is dependent on output loading and cycle rates. Specified values are obtained
specifications are tested after the device is properly initialized.
overshoot: V
DD
current will decrease as CL is reduced. This is due to the fact that the maxi-
t
CK = 143 MHz for -7, 166 MHz for -6.
30pF
IH
OH
DD
and V
IH
or V
tests have V
(MAX) = V
IL
OL
(or between V
. The last valid data element will meet
SS
t
48
SS
T = 1ns.
and V
t
t
t
.
DD
W
W
CKS; clock(s) specified as a reference only at minimum
DD
IL
R plus
R.
, V
Q + 1.2V for a pulse width ≤ 3ns, and the pulse width
A
= 0.25 and V
SS
DD
IH
+105°C (automotive) ) is ensured.
Q must be at same potential.) The two AUTO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +3.3V; f = 1 MHz, T
or V
t
IL
RP; clock(s) specified as a reference only at
and V
IL
levels.
IH
IH
= 2.75, with timing referenced to 1.5V
) in a monotonic manner.
A
A
≤ +70°C and –40°C ≤ T
IL
+70°C (commercial), –40°C ≤ T
undershoot: V
DD
©2001 Micron Technology, Inc. All rights reserved.
A
128Mb: x32 SDRAM
and V
= 25°C; pin under test
t
REF refresh require-
t
OH before going
DD
IL
Q must be pow-
(MIN) = –1.2V
A
≤ +85°C for
Notes
A

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