MT48LC4M32B2P-6:G Micron Technology Inc, MT48LC4M32B2P-6:G Datasheet - Page 8

• Manufacturer Part Number: MT48LC4M32B2P-6:G
• Description: IC SDRAM 128MBIT 167MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2P-6:G

• Package / Case: 86-TSOPII
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: RoHS Compliant
• Memory Case Style: TSOP
• No. Of Pins: 86
• Operating Temperature Range: 0°C To +70°C
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 17/7.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 195mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Configuration: 4 BLK (1M X 32)
• Interface Type: LVTTL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 3:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
90-Ball VFBGA Pin Assignment (Top View)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
DQM1
DQ26
DQ28
V
V
DQ11
DQ13
V
V
V
V
CLK
V
DD
A4
A7
DD
1
SS
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
DQM3
DQ24
V
DQ27
DQ29
DQ31
DQ10
DQ12
V
DQ15
DQ8
CKE
DD
A5
A8
NC
DD
2
Q
Q
DQ25
DQ30
DQ14
V
V
DQ9
V
V
V
NC
A3
A6
NC
A9
NC
3
SS
SS
SS
SS
SS
Q
Q
Ball and Array
4
8
5
6
Pin/Ball Assignments and Descriptions
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
DQ22
DQ17
V
CAS#
DQ6
DQ1
V
A10
BA0
V
V
DD
NC
A2
NC
DD
7
DD
DD
DD
Q
Q
DQM2
DQ23
DQ20
DQ18
DQ16
V
WE#
V
DQ7
DQ5
DQ3
DQ0
BA1
CS#
8
A0
SS
SS
Q
Q
DQM0
DQ21
DQ19
V
V
V
V
RAS#
V
V
DQ4
DQ2
V
A11
9
DD
DD
A1
DD
DD
SS
SS
DD
Q
Q
Q
Q
Q
Q
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM