MT48LC4M32B2P-7:G Micron Technology Inc, MT48LC4M32B2P-7:G Datasheet - Page 63

• Manufacturer Part Number: MT48LC4M32B2P-7:G
• Description: IC SDRAM 128MBIT 143MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2P-7:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 17/8/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 175mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
COMMAND
A0–A9, A11
BA0, BA1
DQM0–3
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Alternating Bank Write Accesses
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
Notes:
t CK
T1
NOP
1. For this example, BL = 4.
2. Faster frequencies require two clocks (when
3. A8, A9, and A11 = “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 3
t DS
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
IN
T4
ROW
ROW
m + 2
t DH
63
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
ENABLE AUTO PRECHARGE
2
- BANK 0
t
COLUMN b 3
t DS
WR >
BANK 1
WRITE
T6
D
IN
t DH
b
t
CK).
t DS
D
NOP
T7
IN
b + 1
t DH
t RP - BANK 0
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
t DS
D
Timing Diagrams
IN
NOP
T8
b + 2
t DH
t DS
D
BANK 0
ACTIVE
T9
ROW
IN
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
DON’T CARE
t DH