MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 20

SDRAM 256M-BIT 1.8V 54-PIN VFBGA

MT48H16M16LFBF-75:H

Manufacturer Part Number
MT48H16M16LFBF-75:H
Description
SDRAM 256M-BIT 1.8V 54-PIN VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (16Mx16)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4707290

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H16M16LFBF-75:H
Manufacturer:
MICRON
Quantity:
5 000
Part Number:
MT48H16M16LFBF-75:H
Manufacturer:
MICRON
Quantity:
5 520
Part Number:
MT48H16M16LFBF-75:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H16M16LFBF-75:H
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT48H16M16LFBF-75:H
Quantity:
260
Electrical Specifications – AC Operating Conditions
Table 10: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–5 apply to all parameters and conditions
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (8192 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
Electrical Specifications – AC Operating Conditions
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Symbol
20
t
t
t
t
t
t
t
t
CMH
t
t
t
t
t
CKH
CMS
t
t
OHn
t
t
RCD
RRD
t
t
CKS
t
t
RAS
t
t
XSR
t
t
REF
RFC
OH
WR
AH
DH
AC
CH
CK
HZ
AS
DS
RC
RP
t
CL
LZ
T
112.5
Min
Micron Technology, Inc. reserves the right to change products or specifications without notice.
52.5
1.5
2.5
2.5
9.6
1.5
0.5
1.5
1.5
2.5
1.8
0.3
60
18
72
18
15
1
6
1
1
1
2
-6
120,000
Max
1.2
64
5
8
5
8
112.5
Min
52.5
67.5
19.2
19.2
1.5
2.5
2.5
7.5
9.6
1.5
0.5
1.5
1.5
2.5
1.8
0.3
72
15
1
1
1
1
2
-75
©2008 Micron Technology, Inc. All rights reserved.
120,000
Max
5.4
5.4
1.2
64
8
8
Unit
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
Notes
10
11
6
7
8
9

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