MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 31

SDRAM 256M-BIT 1.8V 54-PIN VFBGA

MT48H16M16LFBF-75:H

Manufacturer Part Number
MT48H16M16LFBF-75:H
Description
SDRAM 256M-BIT 1.8V 54-PIN VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (16Mx16)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4707290

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PRECHARGE
Figure 11: PRECHARGE Command
BURST TERMINATE
AUTO REFRESH
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks are to be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands are issued to that bank.
BA0, BA1
The BURST TERMINATE command is used to truncate either fixed-length or continu-
ous page bursts. The most recently registered READ or WRITE command prior to the
BURST TERMINATE command is truncated.
AUTO REFRESH is used during normal operation and is analogous to CAS#-BEFORE-
RAS# (CBR) REFRESH in FPM/EDO DRAM. Addressing is generated by the internal
refresh controller. This makes the address bits “Don’t Care” during an AUTO REFRESH
command.
Address
RAS#
CAS#
WE#
CKE
A10
CLK
CS#
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Valid address
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Bank address
Bank selected
All banks
31
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Commands

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