MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 5

• Manufacturer Part Number: MT48H16M16LFBF-75:H
• Description: SDRAM 256M-BIT 1.8V 54-PIN VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4707290

List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: Key Timing Parameters ...................................................................................................................... 1
Table 3: VFBGA Ball Descriptions .................................................................................................................. 12
Table 4: Absolute Maximum Ratings .............................................................................................................. 15
Table 5: DC Electrical Characteristics and Operating Conditions ..................................................................... 15
Table 6: Capacitance ..................................................................................................................................... 16
Table 7: I
Table 8: I
Table 9: I
Table 10: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 20
Table 11: AC Functional Characteristics ......................................................................................................... 21
Table 12: Target Output Drive Characteristics (Full Strength) .......................................................................... 23
Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 24
Table 14: Target Output Drive Characteristics (One-Half Strength) ................................................................. 25
Table 15: Truth Table – Commands and DQM Operation ................................................................................ 27
Table 16: Truth Table – Current State Bank n, Command to Bank n ................................................................. 33
Table 17: Truth Table – Current State Bank n, Command to Bank m ................................................................ 35
Table 18: Truth Table – CKE .......................................................................................................................... 37
Table 19: Burst Definition Table .................................................................................................................... 42
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
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DD7
Specifications and Conditions (x16) ............................................................................................ 17
Specifications and Conditions (x32) ............................................................................................ 17
Specifications and Conditions (x16 and x32) ............................................................................... 18
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.