PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 11

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PBSS302PD T/R

Manufacturer Part Number
PBSS302PD T/R
Description
Transistors Bipolar - BJT PNP 40V 4A LOW SAT
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PD T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
110 MHz
Dc Collector/base Gain Hfe Min
200 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS302PD,115
NXP Semiconductors
11. Soldering
PBSS302PD_2
Product data sheet
Fig 16. Reflow soldering footprint SOT457 (SC-74)
Fig 17. Wave soldering footprint SOT457 (SC-74)
5.05
3.30
Dimensions in mm
Dimensions in mm
2.825
0.95
Rev. 02 — 6 December 2007
5.30
1.40
4.30
3.45
1.95
1.60
1.70
3.10
3.20
40 V, 4 A PNP low V
msc422
0.45 0.55
0.45
1.45 4.45
msc423
PBSS302PD
CEsat
© NXP B.V. 2007. All rights reserved.
solder lands
solder resist
occupied area
solder paste
(BISS) transistor
solder lands
solder resist
occupied area
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