PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS302PD_2
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PBSS302PD
Type number
PBSS302PD
Symbol
V
V
V
I
I
I
I
P
C
CM
B
BM
CBO
CEO
EBO
tot
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
Description
collector
collector
base
emitter
collector
collector
Package
Name
SC-74
Rev. 02 — 6 December 2007
Description
plastic surface-mounted package (TSOP6); 6 leads
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
1 ms
1 ms
25 C
40 V, 4 A PNP low V
Marking code
C9
Simplified outline
1
6
[2][5]
[1]
[2]
[3]
[4]
[1]
5
2
Min
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302PD
4
3
CEsat
Symbol
© NXP B.V. 2007. All rights reserved.
Max
360
600
750
1.1
2.5
(BISS) transistor
40
40
5
4
15
0.8
2
3
1, 2, 5, 6
Version
SOT457
sym030
4
Unit
V
V
V
A
A
A
A
mW
mW
mW
W
W
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