PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
PBSS302PD_2
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Collector-emitter saturation resistance as a
R
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
1
1
2
1
2
1
2
3
I
function of collector current; typical values
10
I
function of collector current; typical values
10
C
C
amb
amb
amb
amb
amb
amb
/I
/I
B
1
B
1
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
(1)
(2)
(3)
2
2
10
10
(1)
(2)
(3)
006aaa289
006aaa284
3
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 6 December 2007
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
1
1
1
2
3
3
2
1
2
T
function of collector current; typical values
10
T
function of collector current; typical values
10
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
1
1
40 V, 4 A PNP low V
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
(1)
(2)
(3)
1
10
(1)
(2)
(3)
10
10
2
PBSS302PD
10
2
CEsat
10
3
© NXP B.V. 2007. All rights reserved.
10
(BISS) transistor
10
006aaa285
006aaa327
3
I
I
C
C
4
(mA)
(A)
10
10
5
4
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