PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
8. Test information
PBSS302PD_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
V
CC
= 10 V; I
oscilloscope
t
d
C
t
on
= 2 A; I
Rev. 02 — 6 December 2007
V
t
I
r
(probe)
450
Bon
= 0.1 A; I
R1
R2
R
Boff
B
V
BB
= 0.1 A
40 V, 4 A PNP low V
R
C
V
CC
DUT
V
o
mgd624
(probe)
I
450
Bon
t
s
I
(100 %)
Boff
t
off
PBSS302PD
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
f
I
006aaa266
C
(100 %)
t
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