MT48LC4M32B2TG-7:G Micron Technology Inc, MT48LC4M32B2TG-7:G Datasheet - Page 42

IC SDRAM 128MBIT 143MHZ 86TSOP

MT48LC4M32B2TG-7:G

Manufacturer Part Number
MT48LC4M32B2TG-7:G
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2TG-7:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
175mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
micron
Quantity:
415
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
MICRONAS
Quantity:
20 000
Electrical Specifications
Table 12:
Temperature and Thermal Impedance
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter
Voltage on V
Voltage on inputs, NC or I/O pins relative to V
Operating temperature,
T
T
T
Storage temperature (plastic)
Power dissipation
A
A
A
(Commercial)
(Industrial)
(Automotive)
DD
Absolute Maximum Ratings
, V
DD
Q supply relative to V
Stresses greater than those listed Table 12 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the SDRAM device’s temperature specifications, shown in Table 13
on page 43, be maintained in order to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. The
thermal impedances are listed in Table 14 on page 43 for the applicable die revision and
packages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 14. To ensure the compatibility of current and future designs, contact
Micron Applications Engineering to confirm thermal impedance values.
The SDRAM device’s safe junction temperature range can be maintained when the T
specification is not exceeded. In applications where the device's ambient temperature is
too high, use of forced air and/or heat sinks may be required in order to satisfy the case
temperature specifications.
SS
SS
42
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications
Min
–40
–40
–55
–1
–1
0
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
1
+105
+150
Max
+4.6
+4.6
+70
+85
Units
°C
°C
W
V
V
C

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