MT48LC4M32B2TG-7:G Micron Technology Inc, MT48LC4M32B2TG-7:G Datasheet - Page 43

IC SDRAM 128MBIT 143MHZ 86TSOP

MT48LC4M32B2TG-7:G

Manufacturer Part Number
MT48LC4M32B2TG-7:G
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2TG-7:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
175mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
micron
Quantity:
415
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
MICRONAS
Quantity:
20 000
Table 13:
Table 14:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Automotive
Junction temperature:
Commercial
Industrial
Automotive
Ambient temperature:
Commercial
Industrial
Automotive
Peak reflow temperature
G
Industrial
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
90-ball
VFBGA
86-pin
TSOP
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. All temperature specifications must be satisfied
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots and the values should be viewed as
3. These are estimates; actual results may vary.
Substrate
side of the device, as shown in Figures 31 and 32 on page 44.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
2-layer
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
82.2
64.6
48.2
55
43
θ JA (°C/W)
Airflow =
1m/s
47.2
50.8
41.1
65
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
2m/s
Min
59.7
45.1
45.3
38.1
–40
–40
–40
–40
–40
–40
0
0
0
Electrical Specifications
Max
105
110
105
260
80
90
85
95
70
85
θ JB (°C/W)
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
49.4
40.6
37.5
32.1
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
10.3
1, 2, 3, 4
1.8
Notes
3, 5
3

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