2N5551 T/R NXP Semiconductors, 2N5551 T/R Datasheet

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2N5551 T/R

Manufacturer Part Number
2N5551 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE WIDE PITCH
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N5551 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
180 V
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
80 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Continuous Collector Current
0.3 A
Maximum Power Dissipation
630 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
2N5551,116
Product specification
Supersedes data of 1999 Apr 23
book, halfpage
DATA SHEET
2N5550; 2N5551
NPN high-voltage transistors
M3D186
DISCRETE SEMICONDUCTORS
2004 Oct 28

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2N5551 T/R Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 ...

Page 2

... Philips Semiconductors NPN high-voltage transistors FEATURES Low current (max. 300 mA) High voltage (max. 160 V). APPLICATIONS Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. ORDERING INFORMATION TYPE NUMBER NAME ...

Page 3

... Philips Semiconductors NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-base cut-off current CBO 2N5550 collector-base cut-off current 2N5551 I emitter-base cut-off current EBO h DC current gain FE 2N5550 2N5551 DC current gain ...

Page 4

... Philips Semiconductors NPN high-voltage transistors 160 handbook, full pagewidth h FE 120 2004 Oct 28 10 Fig.2 DC current gain; typical values. 4 Product specification 2N5550; 2N5551 MGD814 ...

Page 5

... Philips Semiconductors NPN high-voltage transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 6

... Philips Semiconductors NPN high-voltage transistors DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published ...

Page 7

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...

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