2PB709AS T/R NXP Semiconductors, 2PB709AS T/R Datasheet - Page 4

• Manufacturer Part Number: 2PB709AS T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 2PB709AS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 290 at 2 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-346
• Continuous Collector Current: 0.1 A
• Dc Current Gain Hfe Max: 290 at 2 mA at 10 V
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: 2PB709AS,115

NXP Semiconductors
7. Characteristics
2PB709ART_1
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
SOT23 (TO-236AB); typical values
5
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
= 1
0
10
4
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
f
C
CBO
EBO
T
amb
FE
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
10
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
transition frequency
collector capacitance V
Characteristics
3
p
300 s;
10
2
Rev. 01 — 19 March 2007
0.02.
Conditions
V
V
T
V
V
I
I
I
V
I
f = 100 MHz
I
f = 1 MHz
C
C
B
C
E
CB
CB
j
EB
CE
CE
CB
10
= 150 C
= 10 mA
= i
= 2 mA
= 100 mA;
= 1 mA;
= 5 V; I
= 45 V; I
= 45 V; I
= 10 V;
= 10 V;
= 10 V;
1
e
= 0 A;
45 V, 100 mA PNP general-purpose transistor
C
E
E
= 0 A
= 0 A;
= 0 A
1
[1]
Min
-
-
-
210
-
70
-
10
Typ
-
-
-
-
-
-
-
2PB709ART
10
2
© NXP B.V. 2007. All rights reserved.
t
Max
340
-
5
p
006aaa991
10
5
10
500
(s)
10
3
Unit
nA
nA
mV
MHz
pF
A
4 of 10