BCX17 /T3 NXP Semiconductors, BCX17 /T3 Datasheet - Page 4
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BCX17 /T3
Manufacturer Part Number
BCX17 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BCX18_T3.pdf
(7 pages)
Specifications of BCX17 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCX17,235
NXP Semiconductors
CHARACTERISTICS
T
Note
1. V
2004 Jan 16
I
I
h
V
V
C
f
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BE
PNP general purpose transistors
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= I
= 0; V
= −100 mA; V
= −300 mA; V
= −500 mA; V
= −500 mA; I
= −500 mA; V
= −10 mA; V
e
= 0; V
CB
CB
EB
4
= −20 V
= −20 V; T
= −5 V
CB
CONDITIONS
CE
B
= −10 V; f = 1 MHz
CE
CE
CE
CE
= −50 mA
= −5 V; f = 100 MHz
= −1 V
= −1 V
= −1 V
= −1 V; note 1
j
= 150 °C
−
−
−
100
70
40
−
−
−
80
MIN. TYP. MAX. UNIT
BCX17; BCX18
−
−
−
−
−
−
−
−
9
−
Product data sheet
−100
−5
−100
600
−
−
−620
−1.2
−
−
nA
μA
nA
mV
V
pF
MHz