MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 70

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 49:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
COMMAND
A0–A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS t CMH
t CKS
Read – DQM Operation
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Notes:
t CKH
t AH
t AH
t AH
t CK
t RCD
1. For this example, CL = 2.
2. x16: A9 and A11 = “Don’t Care.”
T1
NOP
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
DISABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
T2
READ
BANK
t CMH
t CH
CAS Latency
T3
NOP
t
LZ
t AC
70
T4
NOP
t OH
D
t HZ
OUT
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
t
LZ
t AC
128Mb: x16, x32 Mobile SDRAM
T6
NOP
D
t OH
OUT
t AC
m + 2
UNDEFINED
©2001 Micron Technology, Inc. All rights reserved.
T7
NOP
Timing Diagrams
D
OUT
t OH
t HZ
m + 3
T8
NOP
DON’T CARE