IS43R32800B-5B ISSI, Integrated Silicon Solution Inc, IS43R32800B-5B Datasheet - Page 33
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IS43R32800B-5B
Manufacturer Part Number
IS43R32800B-5B
Description
IC DDR SDRAM 256MBIT 144BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS43R32800B-6BL-TR.pdf
(39 pages)
Specifications of IS43R32800B-5B
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
144-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS43R32800B-5BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS43R32800B-5BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
W rite interr uptedby Write
Wri te interr upted by Read
access is allowed. I nternal W RI TE to RE AD command interval(tWT R) is minimum 1 CL K. The
inputdata on DQ at the interrupting REA D cycle is "don't care". tWTR is referenced from the first
positive edgeafter the last data input.
Burst write operation can be interrupted by write of any bank. R andom column access is allowed.
WRIT E to WRI TE interval is minimum 1 CL K.
Burst write operation can be interrupted by read of the same or the other bank. Ra ndom column
Command
Command
A0-7 ,9-11
A0-7 ,9-11
BA 0,1
BA 0,1
/CLK
DQS
CL K
/CLK
CL K
A8
DQ
DM
A8
DQ
QS
WR IT E
WR IT E
Yi
00
Yi
00
0
0
WR IT E
Dai0
Yj
00
Dai0
0
Dai1
Dai1
Daj0
Wr ite Interrupted by Read (BL=8, CL=2 .5)
Wr ite Interrupted by Wr ite (BL =8)
tWTR
Daj1
WR IT E
RE AD
Daj2
Yk
10
Yj
00
0
0
Daj3
Dak0
Dak1
Dak2
Dak3
WR IT E
Qaj0
Dak4
Yl
00
0
Qaj1 Qaj2 Qaj3
Dak5
Dal0
Dal1
Qaj4 Qaj5 Qaj6
Dal2 Dal3
Dal4
Dal5 Dal6
Qaj7
Dal7
33