NCS2500SNEVB ON Semiconductor, NCS2500SNEVB Datasheet - Page 4
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NCS2500SNEVB
Manufacturer Part Number
NCS2500SNEVB
Description
Power Management IC Development Tools EVAL BOARD
Manufacturer
ON Semiconductor
Type
Other Power Managementr
Datasheet
1.NCS2500SNEVB.pdf
(16 pages)
Specifications of NCS2500SNEVB
Product
Evaluation Boards
Tool Is For Evaluation Of
NCS2500
Input Voltage
11 V
Output Current
100 mA
AC ELECTRICAL CHARACTERISTICS
A
FREQUENCY DOMAIN PERFORMANCE
TIME DOMAIN RESPONSE
HARMONIC/NOISE PERFORMANCE
V
Symbol
GF
SFDR
= +2.0, V
THD
HD2
HD3
BW
IP3
dG
SR
t
dP
e
0.1dB
r
i
t
N
s
N
t
f
IN
Bandwidth
0.1 dB Gain Flatness
Differential Gain
Differential Phase
Slew Rate
Settling Time
Rise and Fall Time
Total Harmonic Distortion
2nd Harmonic Distortion
3rd Harmonic Distortion
Third−Order Intercept
Spurious−Free Dynamic
Input Referred Voltage Noise
Input Referred Current Noise
= 0 V, unless otherwise specified).
3.0 dB Small Signal
3.0 dB Large Signal
Bandwidth
0.01%
0.1%
Range
Characteristic
(V
f = 5.0 MHz, V
CC
A
A
(10%−90%) A
V
V
= +5.0 V, V
= +2.0, R
= +2.0, R
f = 1.0 MHz, Non−Inverting
f = 5.0 MHz, V
f = 5.0 MHz, V
f = 5.0 MHz, V
f = 10 MHz, V
A
A
A
A
A
V
V
f = 1.0 MHz, Inverting
V
V
V
http://onsemi.com
= +2.0, V
= +2.0, V
= +2.0, V
= +2.0, V
= +2.0, V
Conditions
f = 1.0 MHz
L
L
O
A
NCS2500
EE
V
= 150 W, f = 3.58 MHz
= 150 W, f = 3.58 MHz
V
= 2.0 V
= +2.0, V
= +2.0
= −5.0 V, T
O
O
step
step
step
O
4
O
O
O
= 0.5 V
= 2.0 V
= 2.0 V
= 2.0 V
= 2.0 V
= 2.0 V
p−p
= 2.0 V
= 2.0 V
= 2.0 V
step
, R
p−p
p−p
A
L
p−p
p−p
p−p
p−p
= 2.0 V
= −40 C to +85 C, R
= 150 W
Min
L
= 100 W to GND, R
0.02
Typ
200
140
450
−55
−67
−57
0.1
5.0
4.0
30
35
18
35
58
15
15
Max
F
= 1.2 kW,
nV
pA
MHz
MHz
V/ms
dBm
Unit
dBc
dBc
dBc
dB
ns
ns
%
Hz
Hz