MT46V64M16TG-75:A Micron Technology Inc, MT46V64M16TG-75:A Datasheet - Page 45
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MT46V64M16TG-75:A
Manufacturer Part Number
MT46V64M16TG-75:A
Description
IC DDR SDRAM 1GBIT 7.5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16TG-75:A
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V64M16TG-75:A
Manufacturer:
MICRON
Quantity:
39
Figure 20:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
BA0, BA1
Address
V
V
DQS
V
CK#
CKE
A10
DD
V
DM
DQ
TT
CK
REF
DD
Q
1
t VTD 1
INITIALIZATION Timing Diagram
Notes:
LVCMOS
LOW level
Power-up: V
T = 200µs
1. V
2. Although not required by the Micron device, JEDEC specifies issuing another LMR command
3. The two AUTO REFRESH commands at Td0 and Te0 may be applied following the LMR com-
4.
5. While programming the operating parameters, reset the DLL with A8 = 1.
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V
even if V
the V
specified range.
(A8 = 0) prior to activating any bank. If another LMR command is issued, the same, previ-
ously issued operating parameters must be used.
mand at Ta0.
t
DESELECTs are allowed), and 200 cycles of CK are required before a READ command can be
issued.
MRD is required before any command can be applied (during MRD time only NOPs or
DD
TT
TT
t IS t IH
t IS
and CK stable
NOP
, and V
T0
is not applied directly to the device; however,
High-Z
High-Z
TT
t IH
t CH
t CK
supply and the input pin. Once initialized, V
DD
REF
/V
t CL
All banks
DD
t IS t IH
≤ V
PRE
T1
Q are 0V, provided a minimum of 42Ω of series resistance is used between
DD
+ 0.3V. Alternatively, V
t RP
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Load extended
mode register
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t IS t IH
t IS t IH
t IS t IH
BA0 = 1
BA1 = 0
Code
Code
LMR
Ta0
45
t MRD
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Load mode
register5
Code 3
BA0 = 0
BA1 = 0
Code
LMR
Tb0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t MRD
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may be 1.35V maximum during power-up,
All banks
t IS t IH
PRE
Tc0
t
VTD ≥ 0 to avoid device latch-up. V
1Gb: x4, x8, x16 DDR SDRAM
REF
t RP
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must always be powered within the
200 cycles of CK4
Td0
AR
Indicates A Break in
Time Scale
t RFC
©2003 Micron Technology, Inc. All rights reserved.
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Te0
AR
t RFC
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Operations
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ACT 2
Don’t Care
Tf0
BA
RA
RA
DD
Q,