IDT71V416L15PHG8 IDT, Integrated Device Technology Inc, IDT71V416L15PHG8 Datasheet

IC SRAM 4MBIT 15NS 44TSOP

IDT71V416L15PHG8

Manufacturer Part Number
IDT71V416L15PHG8
Description
IC SRAM 4MBIT 15NS 44TSOP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT71V416L15PHG8

Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (256K x 16)
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
71V416L15PHG8
800-1847-2
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Features
Functional Block Diagram
©2004 Integrated Device Technology, Inc.
256K x 16 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
A0 - A17
BHE
BLE
WE
OE
CS
Address
Buffers
Write
Enable
Buffer
Output
Enable
Buffer
Chip
Select
Buffer
Byte
Enable
Buffers
3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
4,194,304-bit
Row / Column
Decoders
Memory
Array
1
Description
as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x
9mm package.
16
The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized
The IDT71V416 has an output enable pin which operates as fast as
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a
Drivers
Sense
Amps
Write
and
8
8
8
8
Output
Output
Buffer
Buffer
Buffer
Buffer
Write
Write
High
Byte
High
Byte
Byte
Byte
Low
Low
8
8
8
8
OCTOBER 2008
IDT71V416S
IDT71V416L
3624 drw 01
I/O 15
I/O 8
I/O 7
I/O 0
DSC-3624/09

Related parts for IDT71V416L15PHG8

IDT71V416L15PHG8 Summary of contents

Page 1

... It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno- vative circuit design techniques, provides a cost-effective solution for high- speed memory needs. The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3 ...

Page 2

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Pin Configurations - SOJ/TSOP SO44-1 ...

Page 3

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Absolute Maximum Ratings Symbol Rating V Supply Voltage Relative Terminal Voltage Relative IN, OUT Temperature Under Bias BIAS T ...

Page 4

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) DC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V ...

Page 5

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) AC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t ...

Page 6

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Read Cycle No. 2 ADDRESS OE CS BHE, BLE DATA OUT NOTES HIGH for Read Cycle. 2. Address must be valid prior to ...

Page 7

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN Timing Waveform of Write Cycle No. 3 (BHE, ...

Page 8

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Ordering Information X 71V416 X Die Device Power Revistion Type X XX XXX X Process/ Speed Package Temperature Range 6.42 8 Commercial and Industrial Temperature Ranges Blank Commercial (0°C ...

Page 9

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Datasheet Document History 08/5/99 Updated to new format Pg 6 Revised footnote for Write Cycle No. 1 diagram 08/31/99 Pg. 1–9 Added Industrial temperature range offering ...

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