MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 17

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MT29F2G08ABAEAH4-IT:E

Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Description
IC FLASH 2G 3.3V SLC 63VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAH4-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
2Gb
Interface Type
Parallel
Address Bus
28b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON
Quantity:
2 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT29F2G08ABAEAH4-IT:E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
MT29F2G08ABAEAH4-IT:E
0
Company:
Part Number:
MT29F2G08ABAEAH4-IT:E
Quantity:
9 800
Figure 10: Array Organization – MT29F2G16 (x16)
Table 3: Array Addressing – MT29F2G16 (x16)
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Second
Fourth
Cycle
Third
Fifth
First
Cache Register
Data Register
1024 blocks
2048 blocks
per device
per plane
I/O[15:8]
LOW
LOW
LOW
LOW
LOW
Notes:
(0, 2, 4, 6, ..., 2044, 2046)
even-numbered blocks
BA15
LOW
LOW
I/07
CA7
BA7
Plane of
1. Block address concatenated with page address = actual page address. CAx = column ad-
2. If CA10 = 1, then CA[9:5] must be 0.
3. BA6 controls plane selection.
1024
1024
1 block
dress; PAx = page address; BAx = block address.
1056 words
BA14
LOW
LOW
I/06
CA6
BA6
32
32
(1, 3, 5, 7, ..., 2045, 2047)
odd-numbered blocks
BA13
LOW
LOW
I/05
CA5
PA5
1024
1024
1 block
Plane of
1056 words
17
BA12
LOW
LOW
I/04
CA4
PA4
32
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
1 page
1 block
1 plane
1 device
BA11
Device and Array Organization
LOW
LOW
I/03
CA3
PA3
DQ0
DQ15
= (1K + 32 words)
= (1K + 32) words x 64 pages
= (64K + 2K) words
= (64K + 2K) words x 1024 blocks
= 1056Mb
= 1056Mb x 2 planes
= 2112Mb
CA10
BA10
LOW
CA2
I/02
PA2
© 2009 Micron Technology, Inc. All rights reserved.
LOW
CA1
CA9
BA9
I/01
PA1
BA16
CA0
CA8
BA8
I/00
PA0

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