RC48F4400P0VB0EJ NUMONYX, RC48F4400P0VB0EJ Datasheet - Page 65

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RC48F4400P0VB0EJ

Manufacturer Part Number
RC48F4400P0VB0EJ
Description
IC FLASH 256MBIT 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of RC48F4400P0VB0EJ

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
512M (32Mx16)
Speed
100ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC48F4400P0VB0EJ
Manufacturer:
Micron Technology Inc
Quantity:
10 000
P30-65nm
17.2
Figure 33: Decoder for SCSP P30-65nm
Note:
Table 31: Valid Combinations for Dual-Die Products
Note:
Datasheet
65
Package Designator
Product Designator
Device Density
Product Family
RD = Numonyx™ SCSP, leaded
PF = Numonyx™ SCSP, lead - free
RC = 64- Ball Easy BGA , leaded
PC = 64- Ball Easy BGA, lead - free
48F = Numonyx™ Flash Memory Only
P = Numonyx
0 = No die
4 = 256-Mbit
0 = No die
The last digit is randomly assigned to cover packing media and/or features or other specific configuration
The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.
PF48F4000P0ZBQE*
PF48F4000P0ZTQE*
®
256-Mbit
Axcell
SCSP Products
TM
Flash Memory (P30)
P
F 4
8
F 4 4
RD48F4400P0VBQE*
RC48F4400P0VB0E*
PF48F4400P0VBQE*
PC48F4400P0VB0E*
0
512-Mbit
0
P 0
*
V
B 0
E
*
Ballout Descriptor
I/ O Voltage, CE # Configuration
Device Features*
Device Details
Parameter Location
V
V
E = 65 nm lithography
0 = Discrete ballout
B = Bottom Parameter
T = Top Parameter
Z = Individual Chip Enable(s)
V = Virtual Chip Enable(s)
Q = QUAD+ ballout
CC
CCQ
= 1. 7 to 2. 0 V
= 1. 7 to 3. 6 V
Order Number: 320002-10
.
Mar 2010

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