R1LP0408CSP-5SC#B0 Renesas Electronics America, R1LP0408CSP-5SC#B0 Datasheet - Page 14

• Manufacturer Part Number: R1LP0408CSP-5SC#B0
• Description: IC SRAM 4MBIT 55NS 32SOP
• Manufacturer: Renesas Electronics America

Specifications of R1LP0408CSP-5SC#B0

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 70°C
• Package / Case: 32-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: R1LP0408CSP5SC#B0

R1LP0408C-C Series
Low V
(Ta = −20 to +70°C)
Parameter
V
Data
retention
current
Chip deselect to data retention time
Operation recovery time
Notes: 1. Typical values are at V
Low V
Rev.2.00, May.26.2004, page 12 of 12
CC
0 V
V
2.2 V
V
4.5 V
CS#
CC
DR
for data retention
CC
2. Typical values are at V
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
4. t
CC
Data Retention Timing Waveform (CS# Controlled)
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
RC
Data Retention Characteristics
−5SC
−7LC
= read cycle time.
t
CDR
to +70°C
to +40°C
to +25°C
to +70°C
to +40°C
to +25°C
CC
CC
= 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
= 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
Symbol Min Typ
V
I
I
I
I
I
I
t
t
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CDR
R
DR
Data retention mode
CS# ≥ V
2






0
t
RC
*
4
CC


1.0*
0.8*

1.0*
0.8*


– 0.2 V
2
1
2
1


Max Unit Test conditions*

8
3
3
16
10
10
V
µA
µA
µA
µA
µA
µA
ns
ns
CS# ≥ V
V
CS# ≥ V
See retention waveform
CC
= 3.0 V, Vin ≥ 0 V
CC
CC
− 0.2 V, Vin ≥ 0 V
− 0.2 V
t
R
3