AT45DB642D-TU Atmel, AT45DB642D-TU Datasheet - Page 50

IC FLASH 64MBIT 66MHZ 28TSOP

AT45DB642D-TU

Manufacturer Part Number
AT45DB642D-TU
Description
IC FLASH 64MBIT 66MHZ 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT45DB642D-TU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
64M (8192 pages x 1056 bytes)
Speed
66MHz
Interface
Parallel/Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Density
64Mb
Access Time (max)
6ns
Interface Type
Parallel/Serial-SPI
Boot Type
Not Required
Address Bus
1/8Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
8M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
28
Data Bus Width
8 bit
Architecture
Sectored
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
256 KB x 32
Memory Configuration
8192 Pages X 1056 Bytes
Clock Frequency
66MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 26-2. Algorithm for Randomly Modifying Data
Notes:
50
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
AT45DB642D
cumulative page erase and program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
START
END
provide address of
page to modify
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
3542K–DFLASH–04/09

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