MT46V128M4TG-5B:F Micron Technology Inc, MT46V128M4TG-5B:F Datasheet - Page 30
![IC DDR SDRAM 512MBIT 5NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V128M4TG-5B:F
Manufacturer Part Number
MT46V128M4TG-5B:F
Description
IC DDR SDRAM 512MBIT 5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V128M4TG-5B:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (128Mx4)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Table 21:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-75E) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V
30
Symbol
t
WPRES
t
t
t
t
WPST
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
0
1
t
QH -
-75E
t
DQSQ
Max
0.6
–
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
t
ns
CK
ns
CK
ns
CK
ns
Notes
21, 22
20
26
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