MT47H32M16BN-37E IT:D TR Micron Technology Inc, MT47H32M16BN-37E IT:D TR Datasheet - Page 68
![IC DDR2 SDRAM 512MBIT 84FBGA](/photos/7/23/72318/mfg557-84-fbga_sml.jpg)
MT47H32M16BN-37E IT:D TR
Manufacturer Part Number
MT47H32M16BN-37E IT:D TR
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H128M4BT-37EA_TR.pdf
(129 pages)
Specifications of MT47H32M16BN-37E IT:D TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 38: Truth Table – Current State Bank n – Command to Bank m
Notes: 1–6 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Current State
Any
Idle
Row
active, active,
or precharge
Read (auto
precharge
disabled)
Write (auto pre-
charge
disabled)
Read (with
auto
precharge)
Write (with
auto
precharge)
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Notes:
RAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after
2. This table describes an alternate bank operation, except where noted (the current state
3. Current state definitions:
met (if the previous state was self refresh).
is for bank n and the commands shown are those allowed to be issued to bank m, assum-
ing that bank m is in such a state that the given command is allowable). Exceptions are
covered in the notes below.
Idle:
Row active:
Read:
Write:
CAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
WE#
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise allowed to bank m
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
The bank has been precharged,
burst is complete.
A row in the bank has been activated and
No data bursts/accesses and no register accesses are in progress.
A READ burst has been initiated with auto precharge disabled
and has not yet terminated.
A WRITE burst has been initiated with auto precharge disabled
and has not yet terminated.
68
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Command/Action
512Mb: x4, x8, x16 DDR2 SDRAM
t
RP has been met, and any READ
©2004 Micron Technology, Inc. All rights reserved.
t
RCD has been met.
t
XSNR has been
Commands
7, 9, 10
Notes
7, 10
7, 8
7, 8
7
7
7
7
7
7
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