MT46H8M32LFB5-6 IT:A TR Micron Technology Inc, MT46H8M32LFB5-6 IT:A TR Datasheet - Page 50

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1279-2; MT46H8M32LFB5-6 IT:A TR

Figure 35:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Cdommand
CK#
CKE
CK
All banks idle with no
activity on the data bus
Deep Power-Down
Notes:
NOP
T0
1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down command.
3. Upon exit from deep power-down mode, a PRECHARGE ALL command must be issued,
followed by the initialization sequence (see page 14).
t IS
DPD
T1
Enter deep power-down mode
2
T2
(
(
(
(
)
(
)
t CKE
)
)
)
(
(
(
)
(
)
(
)
)
)
50
Ta0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
NOP
Ta1
Exit deep power-down mode
T = 200µs
NOP
Ta2
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
Operations
Valid
Ta3
3