CY7C1338B-100AC Cypress Semiconductor Corp, CY7C1338B-100AC Datasheet - Page 12

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CY7C1338B-100AC

Manufacturer Part Number
CY7C1338B-100AC
Description
IC SRAM 4MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1338B-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (128K x 32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1091

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1338B-100AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1338B-100AC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1338B-100ACT
Manufacturer:
CYPRESS
Quantity:
60
Part Number:
CY7C1338B-100ACT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05143 Rev. **
Timing Diagrams
ADV
ADSC
ADSP
Data
In/Out
Read/Write Cycle Timing
CE
CE
OE
WE
ADD
CLK
1
Device originally
deselected
t
t
CLZ
CDV
A
WE is the combination of BWE, BWS
CE is the combination of CE
Qx stands for Data-out X.
the device. RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data-in X,
t
t
AS
ADS
t
t
CES
CES
Q(A)
(continued)
B
t
ADS
t
AH
Q(B)
t
ADVS
(B+1)
Q
2
and CE
ADSP ignored
with CE
(B+2)
t
CH
Q
t
ADVH
[1:0]
3
. All chip selects need to be active in order to select
1
(B+3)
HIGH
Q
, and GW to define a write cycle (see Write Cycle Descriptions table).
t
t
CYC
ADH
Q(B)
t
WES
t
EOHZ
D(C)
C
t
CL
t
t
CEH
ADH
t
(C+1)
CEH
D
t
DOH
t
WEH
(C+2)
D
(C+3)
t
D
CHZ
D
CY7C1338B
Page 12 of 18
Q(D)

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