CY7C1338B-100AC Cypress Semiconductor Corp, CY7C1338B-100AC Datasheet - Page 4

• Manufacturer Part Number: CY7C1338B-100AC
• Description: IC SRAM 4MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1338B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1091

Pin Descriptions
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access delay from
the clock rise (t
The CY7C1338B supports secondary cache in systems utiliz-
ing either a linear or interleaved burst sequence. The inter-
leaved burst order supports Pentium and i486 processors. The
linear burst sequence is suited for processors that utilize a
linear burst sequence. The burst order is user selectable, and
is determined by sampling the MODE input. Accesses can be
initiated with either the Processor Address Strobe (ADSP) or
the Controller Address Strobe (ADSC). Address advancement
through the burst sequence is controlled by the ADV input. A
two-bit on-chip wraparound burst counter captures the first ad-
dress in a burst sequence and automatically increments the
address for the rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip synchro-
nous self-timed write circuitry.
Three synchronous Chip Selects (CE
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. ADSP is ignored if CE
is HIGH.
Document #: 38-05143 Rev. **
CE
CE
OE
ZZ
MODE
DQ
V
V
V
V
NC
DNU
Name
DD
SS
SSQ
DDQ
2
3
[31:0]
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
Input-
Asynchronous
-
I/O-
Synchronous
Power Supply
Ground
Ground
I/O Power
Supply
-
-
CDV
I/O
) is 7.5 ns (117-MHz device).
(continued)
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE
and CE
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE
and CE
Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW,
the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input
data pins.
Snooze Input. Active HIGH asynchronous. When HIGH, the device enters a low-power standby mode
in which all other inputs are ignored, but the data in the memory array is maintained. Leaving ZZ
floating or NC will default the device into an active state. ZZ pin has an internal pull-down.
Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. When left floating or NC, defaults to interleaved burst
order. Mode Pin has an internal pull-up.
Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by the
rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by
A
in conjunction with the internal control logic. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQ
three-stated when a WRITE cycle is detected.
Power supply inputs to the core of the device. Should be connected to 3.3V power supply.
Ground for the I/O circuitry of the device. Should be connected to ground of the system.
Ground for the device. Should be connected to ground of the system.
Power supply for the I/O circuitry. Should be connected to a 3.3V power supply.
No connects.
Do not use pins. Should be left unconnected or tied LOW.
[16:0]
during the previous clock rise of the read cycle. The direction of the pins is controlled by OE
[3:0]
3
2
to select/deselect the device.
to select/deselect the device.
) inputs. A Global Write
1
, CE
[31:0]
2
, CE
and DP
3
) and an
[3:0]
are placed in a three-state condition. The outputs are automatically
1
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE
serted active, and (2) ADSP or ADSC is asserted LOW (if the
access is initiated by ADSC, the write inputs must be deassert-
ed during this first cycle). The address presented to the ad-
dress inputs is latched into the address register and the burst
counter/control logic and presented to the memory core. If the
OE input is asserted LOW, the requested data will be available
at the data outputs a maximum to t
is ignored if CE
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are sat-
isfied at clock rise: (1) CE
active, and (2) ADSP is asserted LOW. The addresses pre-
sented are loaded into the address register and the burst
counter/control logic and delivered to the RAM core. The write
inputs (GW, BWE, and BW
clock cycle. If the write inputs are asserted active (see Write
Cycle Descriptions table for appropriate states that indicate a
write) on the next clock rise, the appropriate data will be
latched and written into the device. Byte writes are allowed.
During byte writes, BW
DQ
All I/Os are three-stated during a byte write. Since this is a
common I/O device, the asynchronous OE input signal must
be deasserted and the I/Os must be three-stated prior to the
presentation of data to DQ
[15:8]
Description
, BW
2
1
controls DQ
is HIGH.
0
[23:16]
1
[31:0]
[3:0]
, CE
controls DQ
) are ignored during this first
, and BW
. As a safety precaution, the
2
1
, and CE
, CE
CDV
2
after clock rise. ADSP
, and CE
[7:0]
CY7C1338B
3
controls DQ
3
, BW
are all asserted
Page 4 of 18
3
1
are all as-
controls
[31:24]
1
1
.