LH5116-10 Sharp Microelectronics, LH5116-10 Datasheet

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LH5116-10

Manufacturer Part Number
LH5116-10
Description
IC SRAM 16KBIT 100NS 24DIP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH5116-10

Rohs Status
RoHS non-compliant
Format - Memory
RAM
Memory Type
SRAM
Memory Size
16K (2K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
24-DIP (0.600", 15.24mm)
Other names
425-1828-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
LH5116-10
Manufacturer:
SHARP
Quantity:
7 900
Part Number:
LH5116-10
Manufacturer:
SHARP
Quantity:
5 510
Part Number:
LH5116-10
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SHARP
Quantity:
1 000
Part Number:
LH5116-10
Manufacturer:
SHARP
Quantity:
1 000
Part Number:
LH5116-10P
Manufacturer:
SHARP
Quantity:
6 219
LH5116/H
FEATURES
2,048
Access time: 100 ns (MAX.)
Power consumption:
Single +5 V power supply
Fully-static operation
TTL compatible I/O
Three-state outputs
Wide temperature range available
Packages:
Operating: 220 mW (MAX.)
Standby: 5.5 W (MAX.)
LH5116H: -40 to +85 C
24-pin, 600-mil DIP
24-pin, 300-mil SK-DIP
24-pin, 450-mil SOP
8 bit organization
DESCRIPTION
bits. It is fabricated using silicon-gate CMOS process
technology. It features high speed access in read mode
using output enable (t
PIN CONNECTIONS
The LH5116/H are static RAMs organized as 2,048 8
24-PIN DIP
24-PIN SK-DIP
24-PIN SOP
Figure 1. Pin Connections for DIP, SK-DIP,
CMOS 16K (2K
GND
I/O
I/O
I/O
A
A
A
A
A
A
A
A
7
6
5
4
3
0
2
3
and SOP Packages
2
1
1
10
12
11
4
7
9
1
2
3
5
6
8
OE
).
20
24
23
22
19
18
17
16
15
14
13
21
8) Static RAM
WE
A
I/O
Vcc
A
A
OE
CE
I/O
I/O
I/O
I/O
8
9
10
8
7
6
5
4
TOP VIEW
5116-1
1

Related parts for LH5116-10

LH5116-10 Summary of contents

Page 1

... LH5116H: -40 to +85 C Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP CMOS 16K (2K DESCRIPTION The LH5116/H are static RAMs organized as 2,048 8 bits fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable ( PIN CONNECTIONS ...

Page 2

... H X Outputs disable NOTE MEMORY CELL ARRAY (128 x128) COLUMN I/O CIRCUIT COLUMN DECODERS COLUMN ADDRESS BUFFERS Figure 2. LH5116/H Block Diagram SIGNAL I GND MODE I/O - I/O SUPPLY CURRENT 1 8 Write D Operating (ICC) IN Read D Operating (I OUT Deselect High-Z Standby (I High-Z Operating (I ...

Page 3

... Output enable access time Output enable Low to output in Low-Z Chip disable to output in High-Z Output disable to output in High-Z Output hold time NOTES (LH5116/NA/D - (LH5116H/HD/HN Active output to high-impedance and high-impedance to output active tests specified for a 200 mV transition from steady state levels into the test load. RATING UNIT -0 ...

Page 4

... Includes scope and jig capacitance. DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL Data retention voltage V CCDR Data retention current I CCDR Chip disable to data t CDR retention Recovery time t R NOTES +70 C (LH5116/D/NA -40 to +85 C (LH5116H/HD/HN Read cycle time RC 1 CAPACITANCE ( MHz, T PARAMETER SYMBOL Input capacitance C IN Input/output capacitance ...

Page 5

... CMOS 16K (2K 8) Static RAM V CC 4 CCDR OUT NOTE "HIGH" t DATA RETENTION MODE CDR CE V -0.2 V CCDR Figure 3. Low Voltage Data Retention ACE OLZ t CLZ DATA VALID Figure 4. Read Cycle LH5116 5116 CHZ t OHZ 5116-3 5 ...

Page 6

... LH5116 OUT 'LOW' NOTES must be HIGH when there is a change When CE and WE are both LOW at the same time, write occurs during the period the time from the rise WE, whichever is first, to the end of the write cycle LOW transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance. ...

Page 7

... 5.5 6.0 0 (V) CC 2 1.0 0.5 5.5 6.0 0 (V) CC Figure 7. Electrical Characteristic Curves = unless otherwise specified) A LH5116 100 AMBIENT TEMPERATURE T (°C) A AVERAGE SUPPLY CURRENT VS. AMBIENT TEMPERATURE 100 AMBIENT TEMPERATURE T (°C) A INPUT VOLTAGE VS. AMBIENT TEMPERATURE 100 AMBIENT TEMPERATURE T (°C) A 5116-7 7 ...

Page 8

... LH5116/H PACKAGE DIAGRAMS 24DIP (DIP024-P-0600 31.30 [1.232] 30.70 [1.209] 2.54 [0.100] 0.60 [0.024] TYP. 0.40 [0.016] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 24SDIP (SDIP024-P-0300 22.25 [0.876] 21.75 [0.856] 1.778 [0.070] 0.56 [0.022] TYP. 0.36 [0.014] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] ...

Page 9

... DIMENSIONS IN MM [INCHES] MINIMUM LIMIT 1.70 [0.067] 13 8.80 [0.346] 12.40 [0.488] 8.40 [0.331] 11.60 [0.457] 12 1.70 [0.067] 0.15 [0.006] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] 24-pin, 450-mil SOP LH5116/H 10.60 [0.417] 0.20 [0.008] 0.10 [0.004] 24SOP 9 ...

Page 10

... ORDERING INFORMATION (T LH5116 Device Type Package Example: LH5116N-10 (CMOS 16K ( Static RAM, 100 ns, 24-pin, 450-mil SOP) ORDERING INFORMATION (T LH5116H Device Type Package Example: LH5116HN-10 (CMOS 16K ( Static RAM, 100 ns, 24-pin, 450-mil SOP Speed 10 100 Access Time (ns) Blank 24-pin, 600-mil DIP (DIP024-P-0600) ...

Page 11

... SHARP Microelectronics of the Americas 5700 NW Pacific Rim Blvd. Camas, WA 98607, U.S.A. Phone: (360) 834-2500 Fax: (360) 834-8903 http://www.sharpsma.com EUROPE SHARP Microelectronics Europe Sonninstraße 3 20097 Hamburg, Germany Phone: (49) 40 2376-2286 Fax: (49) 40 2376-2232 http://www.sharpsme.com ASIA SHARP Corporation Integrated Circuits Group ...

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