M58LW032D110N6 STMicroelectronics, M58LW032D110N6 Datasheet - Page 36

• Manufacturer Part Number: M58LW032D110N6
• Description: IC FLASH 32MBIT 110NS 56TSOP
• Manufacturer: STMicroelectronics

Specifications of M58LW032D110N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1725

M58LW032D
Table 26. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
Table 27. Device Geometry Definition
Note: 1. In x8 mode, A0 must be set to V
36/50
002Ch
002Dh
001Bh
001Ch
001Dh
001Eh
002Ah
002Bh
002Eh
002Fh
001Fh
0020h
0021h
0022h
0023h
0024h
0025h
0026h
0027h
0028h
0029h
0030h
x16
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. In x8 mode, A0 must be set to V
x16
Address
Address
x8
x8
4Eh
5Ah
5Ch
5Eh
3Ch
4Ch
50h
52h
54h
56h
58h
60h
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
(1)
(4)
00h
27h
36h
00h
00h
00h
Data
Data
1Fh
IL
16h
02h
00h
05h
00h
01h
00h
00h
02h
IL
0Ah
04h
08h
04h
04h
04h
, otherwise 00h will be output.
, otherwise 00h will be output.
(3)
(1)
(1)
(2)
(3)
(2)
n where 2
Device Interface
Organization Sync./Async.
Maximum number of bytes in Write Buffer, 2
Bit7-0 = number of Erase Block Regions in device
Number (n-1) of Erase Blocks of identical size; n=64
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
V
V
V
V
2
2
2
2
2
2
2
2
n
n
n
n
n
n
n
n
DD
DD
PP
PP
x typical for buffer write time-out max
µs typical time-out for Word, DWord prog – Not Available
µs, typical time-out for max buffer write
ms, typical time-out for Erase Block
ms, typical time-out for chip erase – Not Available
x typical for Word Dword time-out max – Not Available
x typical for individual block erase time-out maximum
x typical for chip erase max time-out – Not Available
min – Not Available
max – Not Available
Min, 2.7V
max, 3.6V
n
is number of bytes memory Size
Description
Description
n