M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 28
Manufacturer Part Number
IC FLASH 16MBIT 70NS 80PQFP
Specifications of M58BW016FB7T3T
Format - Memory
16M (512K x 32)
Voltage - Supply
2.7 V ~ 3.6 V
-40°C ~ 125°C
Package / Case
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Micron Technology Inc
All bus write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential bus write operations. The commands are
Read Memory Array command
The Read Memory Array command returns the memory to read mode. One bus write cycle
is required to issue the Read Memory Array command and return the memory to read mode.
Subsequent read operations will output the addressed memory array data. Once the
command is issued the memory remains in read mode until another command is issued.
From read mode bus read commands will access the memory array.
Read Electronic Signature command
The Read Electronic Signature command is used to read the manufacturer code, the device
code or the burst configuration register. One bus write cycle is required to issue the Read
Electronic Signature command. Once the command is issued subsequent bus read
operations, depending on the address specified, read the manufacturer code, the device
code or the burst configuration register until another command is issued; see
Asynchronous read electronic signature
Read Query command
The Read Query command is used to read data from the common Flash interface (CFI)
memory area. One bus write cycle is required to issue the Read Query command. Once the
command is issued subsequent bus read operations, depending on the address specified,
read from the common Flash interface memory area. See
information contained in the common Flash interface (CFI) memory area.
Commands. Refer to
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
in conjunction with the text
Appendix A: Common Flash
for details on the