M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 38

no-image

M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT
DC and AC parameters
7
38/70
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 13: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 13.
Figure 6.
1. V
Supply voltage (V
Input/output supply voltage (V
Ambient temperature (T
Load capacitance (C
Clock rise and fall times
Input rise and fall times
Input pulses voltages
Input and output timing ref. voltages
DD
= V
DDQ
Operating and AC measurement conditions
AC measurement input/output waveform
.
DD
)
L
)
A
V DDQIN
)
V DDQ
Parameter
0 V
DDQ
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
)
conditions. Designers should check that the
Grade 6
Grade 3
V DDQIN /2
Min
–40
–40
2.7
2.4
V DDQ /2
AI04153
0 to V
V
Value
DDQ
30
DDQ
/2
Max
V
125
3.6
90
4
4
DD
Units
pF
°C
°C
ns
ns
V
V
V
V

Related parts for M58BW016FB7T3T